• Detecting minute amounts of nitrogen in GaNAs thin films using STEM and CBED 

      Vatanparast, Maryam; Shao, Yu-Tsun; Rajpalke, Mohana; Fimland, Bjørn-Ove; Reenaas, Turid Dory; Holmestad, Randi; Vullum, Per Erik; Zuo, Jian Min (Journal article; Peer reviewed, 2021)
      Nitrogen (N) is a common element added to GaAs for band gap engineering and strain compensation. However, detection of small amounts of N is difficult for electron microscopy as well as for other chemical analysis techniques. ...
    • Strategy for reliable strain measurement in InAs/GaAs materials from high-resolution Z-contrast STEM images 

      Vatanparast, Maryam; Vullum, Per Erik; Nord, Magnus Kristofer; Zuo, Jian Min; Reenaas, Turid Worren; Holmestad, Randi (Journal article; Peer reviewed, 2017)
      Geometric phase analysis (GPA), a fast and simple Fourier space method for strain analysis, can give useful information on accumulated strain and defect propagation in multiple layers of semiconductors, including quantum ...